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| HAT1096C Silicon P Channel MOS FET Power Switching REJ03G1233-0400 Rev.4.00 Jan 26, 2006 Features * Low on-resistance RDS(on) = 225 m typ. (at VGS = -4.5 V) * Low drive current. * 2.5 V gate drive devices. * High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2345 DDDD 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Drain to Source voltage VDSS -20 Gate to Source voltage VGSS 12 Drain current ID -1 Note1 Drain peak current ID (pulse) -4 Body - Drain diode reverse drain current IDR -1 Note 2 Channel dissipation Pch 790 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Notes: 1. PW 10 s, duty cycle 1% 2. When using the glass epoxy board. (FR4 40 x 40 x 1.6mm), Ta = 25C Unit V V A A A mW C C Rev.4.00 Jan 26, 2006 page 1 of 6 HAT1096C Electrical Characteristics (Ta = 25C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Notes: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(th) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF Min -20 12 -- -- -0.4 -- -- 0.6 -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 225 380 0.9 155 40 30 2 0.4 0.6 12 18 28 8 -0.85 Max -- -- 10 -1 -1.4 293 530 -- -- -- -- -- -- -- -- -- -- -- -1.1 Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V Test Conditions ID = -10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 10 V, VDS = 0 VDS = -20 V, VGS = 0 ID = -1 mA, VDS = -10 V Note3 ID = -0.5 mA, VGS = -4.5 V Note3 ID = -0.5 mA, VGS = -2.5 V Note3 ID = -0.5 mA, VDS = -10 V Note3 VDS = -10 V, VGS = 0, f = 1 MHz VDS = -10 V, VGS = -4.5 V, ID = -1 A VDS = -10 V, VGS = -4.5 V, ID = -0.5 A, RL = 20 , Rg = 4.7 IF = -1 A, VGS = 0 Rev.4.00 Jan 26, 2006 page 2 of 6 HAT1096C Main Characteristics Power vs. Temperature Derating 1.0 Maximum Safe Operation Area -100 -30 Ta = 25C,1shot pulse When using the FR4 board. 100 s Pch (W) Drain Current ID (A) 0.8 Test Condition : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), Ta = 25C -10 10 s -3 -1 Channel Dissipation 0.6 1 s m PW = 0.4 DC -0.3 -0.1 -0.03 10 s m er at io op 0.2 n Operation in this area is limited by RDS(on) -1 -3 0 50 100 150 200 -0.01 -0.03 -0.1 -0.3 -10 -30 -100 Ambient Temperature Ta (C) Drain to Source Voltage VDS (V) Typical Output Characteristics -5 -10 V -6.0 V -4.5 V -3.5 V Typical Transfer Characteristics -5 25C VDS = -10 V Pulse Test Tc = 75C Pulse Test -3.0 V Drain Current ID (A) -3 Drain Current ID (A) -4 -4 -25C -2.5 V -3 -2 -2.0 V -2 -1 VGS = -1.5 V -1 0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Voltage VDS(on) (mV) -400 Pulse Test Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (m) 10000 -300 VGS = -2.5 V -200 -1 A 1000 -100 -0.5 A -4.5 V ID = -0.3 A 0 -2 -4 -6 -8 -10 100 -0.1 Pulse Test -1 -10 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.4.00 Jan 26, 2006 page 3 of 6 HAT1096C Static Drain to Source on State Resistance vs. Temperature 600 Static Drain to Source on State Resistance RDS(on) (m) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Pulse Test -1 A -0.5 A -0.3 A 10 3 Tc = -25C 1 25C 0.3 0.1 0.03 0.01 -0.01 -0.03 -0.1 -0.3 75C 500 400 -2.5 V 300 -0.5, -1 A ID = -0.3 A 200 VGS = -4.5 V VDS = -10 V Pulse Test -1 -3 -10 100 -25 0 25 50 75 100 125 150 Case Temperature Tc (C) Drain Current ID (A) Dynamic Input Characteristics Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Capacitance C (pF) VDD = -5 V -10 V -20 V -10 VDD = -5 V -10 V -20 V -2 Gate to Source Voltage VGS (V) 0 0 1000 300 Ciss 100 30 10 3 1 0 Coss Crss -20 -4 -30 -6 VGS = 0 f = 1 MHz -4 -8 -12 -16 -20 -40 0 1 2 3 -8 4 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Reverse Drain Current vs. Source to Drain Voltage -5 100 -5 V -4 VGS = 0, 5 V Switching Characteristics VGS = -4.5 V, VDD = -10 V Rg = 4.7 , Ta = 25C Reverse Drain Current IDR (A) Switching Time t (ns) td(off) tr td(on) 10 tf -3 -2 -1 Pulse Test 0 -0.4 -0.8 -1.2 -1.6 -2.0 1 -0.1 -1 -10 Source to Drain Voltage VSD (V) Drain Current ID (A) Rev.4.00 Jan 26, 2006 page 4 of 6 HAT1096C Switching Time Test Circuit Vin Vin Monitor D.U.T. RL 4.7 Vin -4.5 V VDD = -10 V Vout td(on) 90% Vout Monitor 10% 90% 90% Waveform 10% tr td(off) 10% tf Rev.4.00 Jan 26, 2006 page 5 of 6 HAT1096C Package Dimensions Package Name CMFPAK-6 JEITA Package Code RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D e A c LP E HE A xM A SA b L Reference Symbol Dimension in Millimeters e A2 A yS A1 S e1 b b1 l1 c1 b2 Pattern of terminal position areas c A-A Section A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 l1 Min 0.6 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.22 0.2 0.13 0.11 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.15 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.35 0.5 1.65 Ordering Information Part Name HAT1096C-EL-E Quantity 3000 pcs Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Jan 26, 2006 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 205, AZIA Center, No.133 Yincheng Rd (n), Pudong District, Shanghai 200120, China Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .5.0 |
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